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The stabilization of the threshold switching characteristics of memristive NbOx is examined as a function of sample growth and device characteristics. Sub-stoichiometric Nb2O5 was deposited via magnetron sputtering and patterned in nanoscale (50×50–170×170nm2) W/Ir/NbOx/TiN devices and microscale (2×2–15×15μm2) crossbar Au/Ru/NbOx/Pt devices. Annealing the nanoscale devices at 700 °C removed the need for electroforming the devices. The smallest nanoscale devices showed a large asymmetry in the IV curves for positive and negative bias that switched to symmetric behavior for the larger and microscale devices. Electroforming the microscale crossbar devices created conducting NbO2 filaments with symmetric IV curves whose behavior did not change as the device area increased. The smallest devices showed the largest threshold voltages and most stable threshold switching. As the nanoscale device area increased, the resistance of the devices scaled with the area as R∝A−1, indicating a crystallized bulk NbO2 device. When the nanoscale device size was comparable to the size of the filaments, the annealed nanoscale devices showed similar electrical responses as the electroformed microscale crossbar devices, indicating filament-like behavior in even annealed devices without electroforming. Finally, the addition of up to 1.8% Ti dopant into the films did not improve or stabilize the threshold switching in the microscale crossbar devices.

 

Plasma-enhanced atomic layer deposition (PEALD) enables the epitaxial growth of ultrathin indium nitride (InN) films at significantly reduced process temperatures and with greater control of layer thickness compared to other growth methods. However, the reliance on plasma-surface interactions increases the complexity of the growth process. A detailed understanding of the relationship between the plasma properties and the growth kinetics is therefore required to guide the tuning of growth parameters. We present an in situ investigation of the early-stage PEALD growth kinetics of epitaxial InN within three different plasma regimes using grazing incidence small-angle x-ray scattering (GISAXS). The GISAXS data are supported by diagnostic studies of the plasma species generation in the inductively coupled plasma source as a function of the relative concentrations of the nitrogen/argon gas mixture used in the growth process. The growth mode is found to be correlated to the production of nitrogen species in the plasma, with high concentrations of the atomic N species promoting Volmer–Weber growth (i.e., island growth) and low concentrations promoting Stranski–Krastanov growth (i.e., layer-plus-island growth). The critical thickness for island formation, island center-to-center distance, and island radius are found to increase with ion flux. Furthermore, the island center-to-center distance and areal density are observed to change only during plasma exposure and to continue changing with exposure even after the methylindium adlayer is believed to have fully reacted with the plasma. Our results demonstrate the potential to control the growth kinetics during PEALD of epitaxial films by intentionally accessing specific regimes of plasma species generation.

 

Understanding and controlling the energy transfer between silicon nanocrystals is of significant importance for the design of efficient optoelectronic devices. However, previous studies on silicon nanocrystal energy transfer were limited because of the strict requirements to precisely control the inter-dot distance and to perform all measurements in air-free environments to preclude the effect of ambient oxygen. Here, we systematically investigate the distance-dependent resonance energy transfer in alkyl-terminated silicon nanocrystals for the first time. Silicon nanocrystal solids with inter-dot distances varying from 3 to 5 nm are fabricated by varying the length and surface coverage of alkyl ligands in solution-phase and gas-phase functionalized silicon nanocrystals. The inter-dot energy transfer rates are extracted from steady-state and time-resolved photoluminescence measurements, enabling a direct comparison to theoretical predictions. Our results reveal that the distance-dependent energy transfer rates in Si NCs decay faster than predicted by the Förster mechanism, suggesting higher-order multipole interactions.

 

Abstract The increasing availability and complexity of next-generation sequencing (NGS) data sets make ongoing training an essential component of conservation and population genetics research. A workshop entitled “ConGen 2018” was recently held to train researchers in conceptual and practical aspects of NGS data production and analysis for conservation and ecological applications. Sixteen instructors provided helpful lectures, discussions, and hands-on exercises regarding how to plan, produce, and analyze data for many important research questions. Lecture topics ranged from understanding probabilistic (e.g., Bayesian) genotype calling to the detection of local adaptation signatures from genomic, transcriptomic, and epigenomic data. We report on progress in addressing central questions of conservation genomics, advances in NGS data analysis, the potential for genomic tools to assess adaptive capacity, and strategies for training the next generation of conservation genomicists. 

Interactions between natural selection and population dynamics are central to both evolutionary‐ecology and biological responses to anthropogenic change. Natural selection is often thought to incur a demographic cost that, at least temporarily, reduces population growth. However, hard and soft selection clarify that the influence of natural selection on population dynamics depends on ecological context. Under hard selection, an individual's fitness is independent of the population's phenotypic composition, and substantial population declines can occur when phenotypes are mismatched with the environment. In contrast, under soft selection, an individual's fitness is influenced by its phenotype relative to other interacting conspecifics. Soft selection generally influences which, but not how many, individuals survive and reproduce, resulting in little effect on population growth. Despite these important differences, the distinction between hard and soft selection is rarely considered in ecology. Here, we review and synthesize literature on hard and soft selection, explore their ecological causes and implications and highlight their conservation relevance to climate change, inbreeding depression, outbreeding depression and harvest. Overall, these concepts emphasise that natural selection and evolution may often have negligible or counterintuitive effects on population growth—underappreciated outcomes that have major implications in a rapidly changing world.